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Home > Success Cases > N type GaN Wafers > Pure GaN Wafer-Freestanding

Pure GaN Wafer-Freestanding

Project Description

 Empower next-generation devices with HMT's free-standing GaN substrate wafers. As a pioneering manufacturer, we offer high-quality, cost-competitive 2-inch 4-inch substrates (Un-doped/Si-doped N-type, 400um/450μm, DSP/SSP) and are expanding the frontier with our new 6-inch and 8-inch platforms. We are committed to being your strategic partner, providing the core materials that power innovation. Get in touch with us to learn more.

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M.P: +86-15366208370 ; +86-15366203573
E-mail:
kim@homray-material.com tina@homray-material.com
HMT Silicon Carbide (SiC) Substrate Website: www.sicsubstrate-hmt.com