4 inch uid-GaN on Si Epi Wafer Manufacturers

Homray Material Technology provides high-performance unintentionally doped GaN (uid-GaN) on Silicon epitaxial wafers optimized specifically for advanced MEMS piezoelectric sensors and high-frequency SAW/BAW resonators. By utilizing high-purity MOCVD growth, our uid-GaN on Si epi wafers minimizing electrical leakage in piezoelectric transduction. This commercial-grade product delivers superior electromechanical coupling factors (k2>2.0%) and high thermal stability up to 600∘C, making it the industry standard for high-sensitivity strain, pressure, and acoustic wave sensing.

How does uid-GaN on Si enhance piezoelectric sensing performance?

Unintentionally doped GaN retains intrinsic polarization properties without free-carrier shielding, which drastically increases effective piezoelectric coupling coefficients under mechanical strain. Experimental data demonstrates that high-purity C-plane (0001) uid-GaN thin films achieve a Longitudinal Piezoelectric Coefficient (d33​) of 3.1 pm/V, significantly outperforming conventional polycrystalline AlN thin films on silicon. Furthermore, the absence of intentional dopants reduces defect-assisted charge trapping, maintaining a high dielectric quality factor (Q>1500 at 10 kHz) across broad operating frequency ranges.

What are the key technical specifications of our uid-GaN on Si epi wafers?

Our MOCVD epitaxial platform ensures precise lattice transition engineering between the C-plane GaN layer and the Silicon (111) substrate through optimized AlN/AlGaN step-graded buffer layers.

How does this wafer facilitate cost-effective MEMS sensor manufacturing?

Growing high-purity uid-GaN on large-diameter Silicon substrates reduces fabrication costs by up to 65% compared to native GaN or sapphire-based alternatives. The total thickness variation (TTV) is strictly controlled to under 5 µm, enabling seamless integration with standard 6-inch and 8-inch CMOS/MEMS micro-machining process lines. To learn more about our broader product line, explore our [GaN Epitaxial Wafer Series] for high-power electronics and optoelectronic substrates.

Q1: Why is unintentionally doped GaN preferred over Si-doped GaN for piezoelectric sensors?

Unintentionally doped GaN (uid-GaN) keeps free carrier concentrations below 1×1016 cm−3, preventing free electrons from screening the internal strain-induced electric fields. This maximizes the piezoelectric output voltage and prevents high leakage currents in MEMS transducer devices.

Q2: Can these uid-GaN on Si wafers withstand high-temperature sensor processing?

Yes, our MOCVD-grown AlN/AlGaN strain-compensation buffer layers control wafer warp to under 20 µm. This structural integrity allows the wafer to withstand high-temperature MEMS processing up to 800∘C without crack generation or layer delamination.